2009. 12.21 1/6 semiconductor technical data kF60N06P n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, dc/dc converters and switching mode power supplies. features v dss = 60v, i d = 60a drain-source on resistance : r ds(on) =13.2m (max.) @v gs = 10v qg(typ.) = 48nc mosfet maximum rating (ta=25 unless otherwise noted) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss ?? 20 v drain current @t c =25 ? i d * 60 a @t c =100 ? 37 pulsed (note1) i dp 230 single pulsed avalanche energy (note 2) e as 430 mj repetitive avalanche energy (note 1) e ar 13.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 113 w derate above 25 ? 0.90 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.1 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w g d s pin connection free datasheet http://www.0pdf.com
2009. 12.21 2/6 kF60N06P revision no : 0 2 product name lot no 1 901 2 kf60n06 p 1 marking electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a, referenced to 25 ? - 0.08 - v/ ? drain cut-off current i dss v ds =60v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2 - 4 v gate leakage current i gss v gs = ?? 20v, v ds =0v - - ?? 100 na drain-source on resistance r ds(on) v gs =10v, i d =30a - 11.5 13.2 m ? dynamic total gate charge q g v ds =48v, i d =60a v gs =10v (note4,5) - 48 - nc gate-source charge q gs - 9.2 - gate-drain charge q gd - 19 - turn-on delay time t d(on) v dd =30v i d =60a r g =25 ? (note4,5) - 35 - ns turn-on rise time t r - 75 - turn-off delay time t d(off) - 100 - turn-off fall time t f - 75 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1860 - pf output capacitance c oss - 490 - reverse transfer capacitance c rss - 92 - source-drain diode ratings continuous source current i s v gs 2009. 12.21 3/6 kF60N06P revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 1100 0.1 10 1 10 100 1000 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) (m ? ) fig5. i s - v sd 0.4 0.8 1 1.2 0.6 1.4 reverse drain current i s (a) 20 18 12 10 8 16 14 0100 60 20 40 80 120 junction temperature tj ( ) c source - drain voltage v sd (v) 10 1 200 100 fig6. r ds(on) - t j junction temperature t j ( ) 0 25 50 75 100 125 -50 -25 150 normalized on resistance 0.2 0.6 2.6 2.2 1.0 1.4 1.8 c v gs =10v i d = 30a v gs = 0v i ds = 250 v gs =10v v gs =7v v gs =7v v gs =10v v gs =5v 410 268 1 10 100 1000 100 c 25 c 100 c 25 c v ds = 20v free datasheet http://www.0pdf.com
2009. 12.21 4/6 kF60N06P revision no : 0 drain current i d (a) gate - charge q g (nc) fig 7. c - v ds drain - source voltage v ds (v) 0 10 6 2 4 8 20 50 30 40 10 0 fig 8. q g - v ds fig 9. safe operation area gate - source voltage v gs (v) drain - source voltage v ds (v) 10 100 1000 10000 05 15 25 35 10 20 30 40 c rss v ds =48v c oss c iss fig 10. i d - t c case temperature t c ( c) drain current i d (a) 0 20 40 70 60 10 30 50 025 75 125 175 50 100 150 1 10 100 1000 0.1 1 10 100 0.1 dc r ds(on) limited capacitance (pf) 1ms 10ms 100 s 10 s pulse time (s) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.01 0.1 1 10 fig 11. r th (j-c) r th [ / w] c - duty factor, d= t 1 / t j(max) - t c - r thjc = p d t 1 t 2 p dm single puls e duty=0.5 0.2 0.1 0.05 0.02 0.01 free datasheet http://www.0pdf.com
2009. 12.21 5/6 kF60N06P revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 30v 0.5 v dss 0.8 v dss free datasheet http://www.0pdf.com
2009. 12.21 6/6 kF60N06P revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss free datasheet http://www.0pdf.com
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